On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclin...
On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates
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Publisher
Moscow: Pleiades Publishing
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Language
English
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Moscow: Pleiades Publishing
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Contents
GaAs/AlGaAs laser structures with InGaAs quantum wells are grown by metal-organic chemical vapor deposition (MOCVD) on exact Si(001) substrates and substrates inclined by 4° to the [011] axis with a relaxed Ge buffer layer, emitting in the transparency region of bulk silicon (the wavelength is longer than 1100 nm at room temperature). The threshold...
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Full title
On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates
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TN_cdi_osti_scitechconnect_22756532
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_osti_scitechconnect_22756532
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ISSN
1063-7826
E-ISSN
1090-6479
DOI
10.1134/S1063782617050037
