Radiation Resistance of (HgSe){sub 3}(In{sub 2}Se{sub 3})
Radiation Resistance of (HgSe){sub 3}(In{sub 2}Se{sub 3})
About this item
Full title
Author / Creator
Publisher
United States
Journal title
Language
English
Formats
Publication information
Publisher
United States
Subjects
More information
Scope and Contents
Contents
We present the results of studies of the effect of electron irradiation on the electrophysical parameters of (HgSe){sub 3}(In{sub 2}Se{sub 3}) crystals, which are semimagnetic semiconductors with stoichiometric vacancies. It is shown that irradiation of (HgSe){sub 3}(In{sub 2}Se{sub 3}) with high-energy electrons (E{sub e} = 10 MeV, dose D = 10{sup...
Alternative Titles
Full title
Radiation Resistance of (HgSe){sub 3}(In{sub 2}Se{sub 3})
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_osti_scitechconnect_22943463
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_osti_scitechconnect_22943463
Other Identifiers
ISSN
1064-8887
E-ISSN
1573-9228