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Raman Scattering in AlN Crystals Grown by Sublimation on SiC and AlN Seeds

Raman Scattering in AlN Crystals Grown by Sublimation on SiC and AlN Seeds

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_osti_scitechconnect_22944757

Raman Scattering in AlN Crystals Grown by Sublimation on SiC and AlN Seeds

About this item

Full title

Raman Scattering in AlN Crystals Grown by Sublimation on SiC and AlN Seeds

Publisher

Moscow: Pleiades Publishing

Journal title

Semiconductors (Woodbury, N.Y.), 2019-11, Vol.53 (11), p.1558-1561

Language

English

Formats

Publication information

Publisher

Moscow: Pleiades Publishing

More information

Scope and Contents

Contents

The Raman-scattering technique is used to analyze the structural quality of bulk AlN crystals grown by sublimation on SiC and AlN seeds. Growth on SiC seeds is conducted with retention of the SiC seed during growth (type 1) and with total evaporation of the SiC seed (type 2). Growth on AlN seeds is conducted in tungsten containers with no graphite...

Alternative Titles

Full title

Raman Scattering in AlN Crystals Grown by Sublimation on SiC and AlN Seeds

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_osti_scitechconnect_22944757

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_osti_scitechconnect_22944757

Other Identifiers

ISSN

1063-7826

E-ISSN

1090-6479

DOI

10.1134/S1063782619110034

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