MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Pl...
MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons
About this item
Full title
Author / Creator
Publisher
Moscow: Pleiades Publishing
Journal title
Language
English
Formats
Publication information
Publisher
Moscow: Pleiades Publishing
Subjects
More information
Scope and Contents
Contents
The properties of InGaAs/GaAs quantum dots (QDs) grown by MOS-hydride migration-stimulated epitaxy at a reduced pressure using submonolayer deposition are investigated. The wavelength of their photoluminescence at 300 K is in the range of 1.28–1.31 μm and can be controlled by varying the growth temperature and the number of QD-deposition cycles. Th...
Alternative Titles
Full title
MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons
Authors, Artists and Contributors
Author / Creator
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_osti_scitechconnect_22945052
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_osti_scitechconnect_22945052
Other Identifiers
ISSN
1063-7826
E-ISSN
1090-6479
DOI
10.1134/S1063782619030047
