3.3 kV PT-IGBT with voltage-sensor monolithically integrated: Power Semiconductor Devices and Integr...

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3.3 kV PT-IGBT with voltage-sensor monolithically integrated: Power Semiconductor Devices and Integr...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pascalfrancis_primary_28499802

3.3 kV PT-IGBT with voltage-sensor monolithically integrated: Power Semiconductor Devices and Integrates Circuits

About this item

Full title

3.3 kV PT-IGBT with voltage-sensor monolithically integrated: Power Semiconductor Devices and Integrates Circuits

Author / Creator

URRESTI, Jesus , HIDALGO, Salvador , FLORES, David and HEVIA, Daniel Fernandez

Publisher

Stevenage: Institution of Engineering and Technology

Journal title

IET circuits, devices & systems, 2014, Vol.8 (3), p.182-187

Language

English

Formats

Articles

Publication information

Publisher

Stevenage: Institution of Engineering and Technology

Subjects

Subjects and topics

More information

Alternative Titles

Full title

3.3 kV PT-IGBT with voltage-sensor monolithically integrated: Power Semiconductor Devices and Integrates Circuits

Authors, Artists and Contributors

Author / Creator

URRESTI, Jesus
HIDALGO, Salvador
FLORES, David
HEVIA, Daniel Fernandez

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_pascalfrancis_primary_28499802

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pascalfrancis_primary_28499802

Other Identifiers

ISSN

1751-858X

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