Electronic structure of SiC (310) twin boundary doped with B, N, Al and Ti
Electronic structure of SiC (310) twin boundary doped with B, N, Al and Ti
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Author / Creator
Ye, Yajing , Zhang, Litong , Su, Kehe , Cheng, Laifei and Xu, Yongdong
Publisher
Heidelberg: Wuhan University of Technology
Journal title
Language
English
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Publisher
Heidelberg: Wuhan University of Technology
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Contents
Doping of boron, nitrogen, aluminum and titanium in the SiC (310) twin boundary was investigated, and the first-principle calculation was used to analyze the underlying mechanism of excellent creep resistance and strength of Sylramic and Tyranno SA SiC fibers. The electronic structures were also analyzed and compared. The results of Mulliken overla...
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Full title
Electronic structure of SiC (310) twin boundary doped with B, N, Al and Ti
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TN_cdi_proquest_journals_1113324467
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_1113324467
Other Identifiers
ISSN
1000-2413
E-ISSN
1993-0437
DOI
10.1007/s11595-009-4599-2
