Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with co...
Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate
About this item
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Publisher
New York, USA: Cambridge University Press
Journal title
Language
English
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Publisher
New York, USA: Cambridge University Press
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Scope and Contents
Contents
Development of 3C–SiC-based electronics is hampered by film quality and wafer bow produced during growth on silicon. This work presents an approach aimed to improve the compliance between Si and 3C–SiC by manipulating Si substrate surface with the creation of an array of squared-base Inverted Silicon Pyramids (ISP) and stimulating the annihilation...
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Full title
Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate
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TN_cdi_proquest_journals_1289465651
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_1289465651
Other Identifiers
ISSN
0884-2914
E-ISSN
2044-5326
DOI
10.1557/jmr.2012.268
