Characterization of High-k Gate Dielectric with Amorphous Nanostructure
Characterization of High-k Gate Dielectric with Amorphous Nanostructure
About this item
Full title
Characterization of High-k Gate Dielectric with Amorphous Nanostructure
Author / Creator
Publisher
Boston: Springer US
Journal title
Journal of electronic materials, 2013-12, Vol.42 (12), p.3529-3540
Language
English
Formats
Publication information
Publisher
Boston: Springer US
Subjects
More information
Scope and Contents
Contents
In the present study, Zr
x
La
1−
x
O
y
amorphous nanostructures were prepared by the sol–gel method such that the Zr atomic fraction (
x
) ranged from 0% to 70%. An analytical model is described for the dielectric constant (
k
) of Zr
x
La
1−
x
O
y
nanostructures in a metal–oxide–semiconductor (...
Alternative Titles
Full title
Characterization of High-k Gate Dielectric with Amorphous Nanostructure
Authors, Artists and Contributors
Author / Creator
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_journals_1448980996
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_1448980996
Other Identifiers
ISSN
0361-5235
E-ISSN
1543-186X
DOI
10.1007/s11664-013-2772-z
