Thermal Misfit Strain Relaxation in Ge/(001)Si Heterostructures
Thermal Misfit Strain Relaxation in Ge/(001)Si Heterostructures
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Boston: Springer US
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English
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Boston: Springer US
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We used x-ray diffraction and transmission electron microscopy to study the mechanism of thermal misfit strain relaxation in epitaxial Ge films grown on Si(001) substrates by the two-step growth technique. Lattice misfit strain associated with Ge/Si(001)Si mismatched epitaxy is largely relieved by a network of Lomer edge misfit dislocations during...
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Full title
Thermal Misfit Strain Relaxation in Ge/(001)Si Heterostructures
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TN_cdi_proquest_journals_1550968975
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_1550968975
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ISSN
0361-5235
E-ISSN
1543-186X
DOI
10.1007/s11664-014-3247-6
