AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy
AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy
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New York: Springer US
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English
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New York: Springer US
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AlN nanowall structures were grown on Si (111) substrate using molecular beam epitaxy at substrate temperature of 700 °C with N/Al flux ratios ranging from 50 to 660. A few types of other AlN nanostructures were also grown under the nitrogen-rich conditions. The AlN nanowalls were ranged typically 60–120 nm in width and from 190 to 470 nm in length...
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AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy
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TN_cdi_proquest_journals_1749590454
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_1749590454
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ISSN
1931-7573
E-ISSN
1556-276X
DOI
10.1186/s11671-015-1178-7
