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Thickness-Dependent Bipolar Resistive Switching Behaviors of NiOx Films

Thickness-Dependent Bipolar Resistive Switching Behaviors of NiOx Films

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_1790005864

Thickness-Dependent Bipolar Resistive Switching Behaviors of NiOx Films

About this item

Full title

Thickness-Dependent Bipolar Resistive Switching Behaviors of NiOx Films

Publisher

Pfaffikon: Trans Tech Publications Ltd

Journal title

Materials science forum, 2016-03, Vol.847, p.131-136

Language

English

Formats

Publication information

Publisher

Pfaffikon: Trans Tech Publications Ltd

More information

Scope and Contents

Contents

Oxygen-rich polycrystalline NiOx films were prepared by means of magnetron sputtering. Thickness-dependent bipolar resistive switching behaviors revealed that the 20 nm-thick NiOx film presented a clockwise current-voltage loop, while the 60 nm-thick NiOx film achieved an anti-clockwise current-voltage loop. Redox reactions between penetrated Ag io...

Alternative Titles

Full title

Thickness-Dependent Bipolar Resistive Switching Behaviors of NiOx Films

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_proquest_journals_1790005864

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_1790005864

Other Identifiers

ISSN

0255-5476,1662-9752

E-ISSN

1662-9752

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