SiC UV Detectors under Heavy Ions Irradiation
SiC UV Detectors under Heavy Ions Irradiation
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Publisher
Pfaffikon: Trans Tech Publications Ltd
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Language
English
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Publisher
Pfaffikon: Trans Tech Publications Ltd
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Contents
4H-SiC ultraviolet photodetectors based on Schottky barriers have been formed on lightly doped n-type epitaxial layers grown by chemical vapor deposition method on industrial substrates. The diode structures were irradiated at 25°C with 167 MeV Xe ions at a fluence of 6x109 cm-2. Comparative studies of the optical and electrical properties of initi...
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Full title
SiC UV Detectors under Heavy Ions Irradiation
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TN_cdi_proquest_journals_1791360516
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_1791360516
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ISSN
0255-5476,1662-9752
E-ISSN
1662-9752
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