Electrically Active Defects In Solar Cells Based On Amorphous Silicon/Crystalline Silicon Heterojunc...
Electrically Active Defects In Solar Cells Based On Amorphous Silicon/Crystalline Silicon Heterojunction After Irradiation By Heavy Xe Ions
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Publisher
Bratislava: De Gruyter Open
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Language
English
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Publisher
Bratislava: De Gruyter Open
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Contents
The contribution is focused on the diagnostics of structures with a heterojunction between amorphous and crystalline silicon prepared by HIT (Heterojunction with an Intrinsic Thin layer) technology. The samples were irradiated by Xe ions with energy 167 MeV and doses from 5 × 10
cm
to 5 × 10
cm
. Radiation defects induced in the bulk of...
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Full title
Electrically Active Defects In Solar Cells Based On Amorphous Silicon/Crystalline Silicon Heterojunction After Irradiation By Heavy Xe Ions
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TN_cdi_proquest_journals_1865275262
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_1865275262
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ISSN
1339-309X,1335-3632
E-ISSN
1339-309X
DOI
10.2478/jee-2015-0053
