Study of Defects in High Energy Ion Implanted ZnO Crystals
Study of Defects in High Energy Ion Implanted ZnO Crystals
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Full title
Study of Defects in High Energy Ion Implanted ZnO Crystals
Author / Creator
Publisher
Zurich: Trans Tech Publications Ltd
Journal title
Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 2017-03, Vol.373, p.193-196
Language
English
Formats
Publication information
Publisher
Zurich: Trans Tech Publications Ltd
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Scope and Contents
Contents
Positron annihilation spectroscopy (PAS) was employed for characterization of defects in the hydrothermally (HT) grown zinc oxide single crystals irradiated by high energy ions. Defects created in ZnO crystals by 2.5 MeV protons, 7.5 MeV N3+ and 167 MeV Xe26+ ions were compared. The virgin ZnO crystals contain Zn-vacancies associated with hydrogen....
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Full title
Study of Defects in High Energy Ion Implanted ZnO Crystals
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Record Identifier
TN_cdi_proquest_journals_1880542348
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_1880542348
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