Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained S...
Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers
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Publisher
Moscow: Pleiades Publishing
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Language
English
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Publisher
Moscow: Pleiades Publishing
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Contents
The electroluminescence of structures with self-assembled Ge(Si) nanoislands grown on relaxed SiGe/Si(001) buffer layers and confined between strained Si layers is studied for the first time. The electroluminescence signal from the structures is observed in the wavelength range from 1.6 to 2.0 μm, i.e., at longer wavelengths compared to those in th...
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Full title
Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers
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TN_cdi_proquest_journals_1880785170
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_1880785170
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ISSN
1063-7826
E-ISSN
1090-6479
DOI
10.1134/S1063782616120046