Log in to save to my catalogue

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained S...

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained S...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_1880785170

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

About this item

Full title

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

Publisher

Moscow: Pleiades Publishing

Journal title

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1657-1661

Language

English

Formats

Publication information

Publisher

Moscow: Pleiades Publishing

More information

Scope and Contents

Contents

The electroluminescence of structures with self-assembled Ge(Si) nanoislands grown on relaxed SiGe/Si(001) buffer layers and confined between strained Si layers is studied for the first time. The electroluminescence signal from the structures is observed in the wavelength range from 1.6 to 2.0 μm, i.e., at longer wavelengths compared to those in th...

Alternative Titles

Full title

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_proquest_journals_1880785170

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_1880785170

Other Identifiers

ISSN

1063-7826

E-ISSN

1090-6479

DOI

10.1134/S1063782616120046

How to access this item