Defect formation in supported graphene irradiated by accelerated xenon ions
Defect formation in supported graphene irradiated by accelerated xenon ions
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Publisher
New York: Springer US
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Language
English
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New York: Springer US
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Contents
Raman spectroscopy and Monte-Carlo simulation studies for supported graphene irradiated by 160 MeV Xe ions are presented. Changes in the density and dominating types of defects with increasing fluence were observed. In order to analyze contribution of defect formation mechanisms, in which the substrate is involved, a comparative study was performed...
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Full title
Defect formation in supported graphene irradiated by accelerated xenon ions
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TN_cdi_proquest_journals_1966734333
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_1966734333
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ISSN
0957-4522
E-ISSN
1573-482X
DOI
10.1007/s10854-017-8265-8