Atomic origin of the traps in memristive interface
Atomic origin of the traps in memristive interface
About this item
Full title
Author / Creator
Tian, Ye , Pan, Lida , Guo, Chuan Fei and Liu, Qian
Publisher
Beijing: Tsinghua University Press
Journal title
Language
English
Formats
Publication information
Publisher
Beijing: Tsinghua University Press
Subjects
More information
Scope and Contents
Contents
In recent years, trap-related interfacial transport phenomena have received great attention owing to their potential applications in resistive switching devices and photo detectors. Not long ago, one new type of memristive interface that is composed of F-doped SnO2 and Bi2S3 nano-network layers has demonstrated a bivariate-continuous-tunable resist...
Alternative Titles
Full title
Atomic origin of the traps in memristive interface
Authors, Artists and Contributors
Author / Creator
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_journals_2001468649
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2001468649
Other Identifiers
ISSN
1998-0124
E-ISSN
1998-0000
DOI
10.1007/s12274-016-1376-3
