Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM...
Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications
About this item
Full title
Author / Creator
Publisher
New York: Springer US
Journal title
Language
English
Formats
Publication information
Publisher
New York: Springer US
Subjects
More information
Scope and Contents
Contents
The
γ
-radiation effects on the electrical characteristics of metal–insulator-semiconductor capacitors based on HfO
2
, and on the resistive switching characteristics of the structures have been studied. The HfO
2
was grown directly on silicon substrates by atomic layer deposition. Some of the capacitors were submitted to a
γ
Alternative Titles
Full title
Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_journals_2020628606
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2020628606
Other Identifiers
ISSN
0361-5235
E-ISSN
1543-186X
DOI
10.1007/s11664-018-6257-y
