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High Temperature Behavior Prediction Techniques for Non-Uniform Ni/SiC Schottky Diodes

High Temperature Behavior Prediction Techniques for Non...

High Temperature Behavior Prediction Techniques for Non-Uniform Ni/SiC Schottky Diodes

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2052521495

High Temperature Behavior Prediction Techniques for Non-Uniform Ni/SiC Schottky Diodes

About this item

Full title

High Temperature Behavior Prediction Techniques for Non-Uniform Ni/SiC Schottky Diodes

Publisher

Pfaffikon: Trans Tech Publications

Journal title

Materials science forum, 2018-06, Vol.924, p.1-1

Language

English

Formats

Publication information

Publisher

Pfaffikon: Trans Tech Publications

More information

Scope and Contents

Contents

Two characterization methods are compared in terms of their suitability for predicting the electrical behavior of non-uniform Ni/4H-SiC Schottky contacts up to 450°C, using data measured at lower temperatures. These techniques are based on the established Gaussian distribution of barrier heights model and a recently proposed discrete barrier distri...

Alternative Titles

Full title

High Temperature Behavior Prediction Techniques for Non-Uniform Ni/SiC Schottky Diodes

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_proquest_journals_2052521495

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2052521495

Other Identifiers

ISBN

9783035711455,3035711453

ISSN

0255-5476,1662-9752

E-ISSN

1662-9752

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