High Temperature Behavior Prediction Techniques for Non-Uniform Ni/SiC Schottky Diodes
High Temperature Behavior Prediction Techniques for Non-Uniform Ni/SiC Schottky Diodes
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Pfaffikon: Trans Tech Publications
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Language
English
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Pfaffikon: Trans Tech Publications
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Contents
Two characterization methods are compared in terms of their suitability for predicting the electrical behavior of non-uniform Ni/4H-SiC Schottky contacts up to 450°C, using data measured at lower temperatures. These techniques are based on the established Gaussian distribution of barrier heights model and a recently proposed discrete barrier distri...
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High Temperature Behavior Prediction Techniques for Non-Uniform Ni/SiC Schottky Diodes
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TN_cdi_proquest_journals_2052521495
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2052521495
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ISBN
9783035711455,3035711453
ISSN
0255-5476,1662-9752
E-ISSN
1662-9752
DOI
10.4028/www.scientific.net/MSF.924.967