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Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs and BSb

Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs and BSb

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2073407057

Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs and BSb

About this item

Full title

Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs and BSb

Publisher

Ithaca: Cornell University Library, arXiv.org

Journal title

arXiv.org, 2018-07

Language

English

Formats

Publication information

Publisher

Ithaca: Cornell University Library, arXiv.org

More information

Scope and Contents

Contents

Through first-principles calculations, the phonon-limited transport properties of cubic boron-V compounds (BP, BAs and BSb) are studied. We find that the high optical phonon frequency in these compounds leads to the substantial suppression of polar scattering and the reduction of inter-valley transition mediated by large-wavevector optical phonons,...

Alternative Titles

Full title

Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs and BSb

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_proquest_journals_2073407057

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2073407057

Other Identifiers

E-ISSN

2331-8422

DOI

10.48550/arxiv.1807.02732

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