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Electronic Structure of the Ferromagnetic Semiconductor Fe-doped Ge Revealed by Soft X-ray Angle-Res...

Electronic Structure of the Ferromagnetic Semiconductor Fe-doped Ge Revealed by Soft X-ray Angle-Res...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2075321887

Electronic Structure of the Ferromagnetic Semiconductor Fe-doped Ge Revealed by Soft X-ray Angle-Resolved Photoemission Spectroscopy

About this item

Full title

Electronic Structure of the Ferromagnetic Semiconductor Fe-doped Ge Revealed by Soft X-ray Angle-Resolved Photoemission Spectroscopy

Publisher

Ithaca: Cornell University Library, arXiv.org

Journal title

arXiv.org, 2016-05

Language

Formats

Publication information

Publisher

Ithaca: Cornell University Library, arXiv.org

More information

Scope and Contents

Contents

Ge\(_{1-x}\)Fe\(_{x}\) (Ge:Fe) shows ferromagnetic behavior up to a relatively high temperature of 210 K, and hence is a promising material for spintronic applications compatible with Si technology. We have studied its electronic structure by soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) measurements in order to elucidate the mech...

Alternative Titles

Full title

Electronic Structure of the Ferromagnetic Semiconductor Fe-doped Ge Revealed by Soft X-ray Angle-Resolved Photoemission Spectroscopy

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Primary Identifiers

Record Identifier

TN_cdi_proquest_journals_2075321887

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2075321887

Other Identifiers

E-ISSN

2331-8422

DOI

10.48550/arxiv.1605.05275

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