A thermodynamic theory of filamentary resistive switching
A thermodynamic theory of filamentary resistive switching
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Ithaca: Cornell University Library, arXiv.org
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English
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Ithaca: Cornell University Library, arXiv.org
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We present a phenomenological theory of filamentary resistive random access memory (RRAM) describing the commonly observed features of their current-voltage characteristics. Our approach follows the approach of thermodynamic theory developed earlier for chalcogenide memory and threshold switches and largely independent of their microscopic details....
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Full title
A thermodynamic theory of filamentary resistive switching
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TN_cdi_proquest_journals_2076020168
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2076020168
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E-ISSN
2331-8422
DOI
10.48550/arxiv.1702.01480
