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Exchange-driven spin relaxation in ferromagnet/oxide/semiconductor heterostructures

Exchange-driven spin relaxation in ferromagnet/oxide/semiconductor heterostructures

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2078226300

Exchange-driven spin relaxation in ferromagnet/oxide/semiconductor heterostructures

About this item

Full title

Exchange-driven spin relaxation in ferromagnet/oxide/semiconductor heterostructures

Publisher

Ithaca: Cornell University Library, arXiv.org

Journal title

arXiv.org, 2015-08

Language

English

Formats

Publication information

Publisher

Ithaca: Cornell University Library, arXiv.org

More information

Scope and Contents

Contents

We investigate electron spin relaxation in GaAs in the proximity of a Fe/MgO layer using spin-resolved optical pump-probe spectroscopy, revealing a strong dependence of the spin relaxation time on the strength of an exchange-driven hyperfine field. The temperature dependence of this effect reveals a strong correlation with carrier freeze out, imply...

Alternative Titles

Full title

Exchange-driven spin relaxation in ferromagnet/oxide/semiconductor heterostructures

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_proquest_journals_2078226300

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2078226300

Other Identifiers

E-ISSN

2331-8422

DOI

10.48550/arxiv.1508.00164

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