Processing and characterization of epitaxial GaAs radiation detectors
Processing and characterization of epitaxial GaAs radiation detectors
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Author / Creator
X Wu , Peltola, T , Arsenovich, T , Gädda, A , Härkönen, J , Junkes, A , Karadzhinova, A , Kostamo, P , Lipsanen, H , Luukka, P , Mattila, M , Nenonen, S , Riekkinen, T , Tuominen, E and Winkler, A
Publisher
Ithaca: Cornell University Library, arXiv.org
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English
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Ithaca: Cornell University Library, arXiv.org
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Contents
GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 \(\mu\textrm{m}\) - 130 \(\mu\textrm{m}\) thick epitaxial absorption volume. Thick undoped and heavily doped p\(^+\) epitaxial layers we...
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Full title
Processing and characterization of epitaxial GaAs radiation detectors
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Record Identifier
TN_cdi_proquest_journals_2081696006
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2081696006
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E-ISSN
2331-8422
DOI
10.48550/arxiv.1503.04009
