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Universal scaling of resistivity in bilayer graphene

Universal scaling of resistivity in bilayer graphene

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2082635671

Universal scaling of resistivity in bilayer graphene

About this item

Full title

Universal scaling of resistivity in bilayer graphene

Publisher

Ithaca: Cornell University Library, arXiv.org

Journal title

arXiv.org, 2012-11

Language

English

Formats

Publication information

Publisher

Ithaca: Cornell University Library, arXiv.org

More information

Scope and Contents

Contents

We report the temperature dependent electrical transport properties of gated bilayer graphene devices. We see a clear evidence of insulating behavior due to electron-hole charge puddles. The electrical resistivity increases while the mobility decreases with decreasing temperature, a characteristic due to carrier inhomogeneity in graphene. The theor...

Alternative Titles

Full title

Universal scaling of resistivity in bilayer graphene

Authors, Artists and Contributors

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_proquest_journals_2082635671

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2082635671

Other Identifiers

E-ISSN

2331-8422

DOI

10.48550/arxiv.1211.3807

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