Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC
Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC
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Author / Creator
Terzo, S , Macchiolo, A , Nisius, R and Paschen, B
Publisher
Ithaca: Cornell University Library, arXiv.org
Journal title
Language
English
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Publication information
Publisher
Ithaca: Cornell University Library, arXiv.org
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Scope and Contents
Contents
Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 \(\mu\)m, produced at CiS, and 100-200 \(\mu\)m thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy physics collider experiments to ensure...
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Full title
Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC
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Author / Creator
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Record Identifier
TN_cdi_proquest_journals_2082791115
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2082791115
Other Identifiers
E-ISSN
2331-8422
DOI
10.48550/arxiv.1409.8579
