The role of charge traps in inducing hysteresis: capacitance - voltage measurements on top gated bil...
The role of charge traps in inducing hysteresis: capacitance - voltage measurements on top gated bilayer graphene
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Ithaca: Cornell University Library, arXiv.org
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English
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Ithaca: Cornell University Library, arXiv.org
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Understanding the origin of hysteresis in the channel resistance from top gated graphene transistors is important for transistor applications. Capacitance - voltage measurements across the gate oxide on top gated bilayer graphene show hysteresis with a charging and discharging time constant of ~100 {\mu}s. However, the measured capacitance across t...
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The role of charge traps in inducing hysteresis: capacitance - voltage measurements on top gated bilayer graphene
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TN_cdi_proquest_journals_2082865460
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2082865460
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E-ISSN
2331-8422
DOI
10.48550/arxiv.1208.1831
