Evolution in Surface Morphology of Epitaxial Graphene Layers on SiC Induced by Controlled Structural...
Evolution in Surface Morphology of Epitaxial Graphene Layers on SiC Induced by Controlled Structural Strain
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Ithaca: Cornell University Library, arXiv.org
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English
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Ithaca: Cornell University Library, arXiv.org
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The evolution in the surface morphology of epitaxial graphene films and 6H-SiC(0001) substrates is studied by electron channeling contrast imaging. Whereas film thickness is determined by growth temperature only, increasing growth times at constant temperature affect both internal stress and film morphology. Annealing times in excess of 8-10 minute...
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Evolution in Surface Morphology of Epitaxial Graphene Layers on SiC Induced by Controlled Structural Strain
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TN_cdi_proquest_journals_2089924254
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2089924254
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2331-8422
DOI
10.48550/arxiv.0810.5171
