Evidence of structural strain in epitaxial graphene layers on 6H-SiC(0001)
Evidence of structural strain in epitaxial graphene layers on 6H-SiC(0001)
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Ithaca: Cornell University Library, arXiv.org
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English
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Ithaca: Cornell University Library, arXiv.org
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The early stages of epitaxial graphene layer growth on the Si-terminated 6H-SiC(0001) are investigated by Auger electron spectroscopy (AES) and depolarized Raman spectroscopy. The selection of the depolarized component of the scattered light results in a significant increase in the C-C bond signal over the second order SiC Raman signal, which allow...
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Full title
Evidence of structural strain in epitaxial graphene layers on 6H-SiC(0001)
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TN_cdi_proquest_journals_2090641158
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2090641158
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E-ISSN
2331-8422
DOI
10.48550/arxiv.0808.3605
