Comparison of near-interface traps in Al\(_2\)O\(_3\)/4H-SiC and Al\(_2\)O\(_3\)/SiO\(_2\)/4H-SiC st...
Comparison of near-interface traps in Al\(_2\)O\(_3\)/4H-SiC and Al\(_2\)O\(_3\)/SiO\(_2\)/4H-SiC structures
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Ithaca: Cornell University Library, arXiv.org
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English
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Ithaca: Cornell University Library, arXiv.org
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Aluminum oxide (Al2O3) has been grown by atomic layer deposition on n-type 4H-SiC with and without a thin silicon dioxide (SiO2) intermediate layer. By means of Capacitance Voltage and Thermal Dielectric Relaxation Current measurements, the interface properties have been investigated. Whereas for the samples with an interfacial SiO2 layer the highe...
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Comparison of near-interface traps in Al\(_2\)O\(_3\)/4H-SiC and Al\(_2\)O\(_3\)/SiO\(_2\)/4H-SiC structures
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TN_cdi_proquest_journals_2091056118
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2091056118
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2331-8422
DOI
10.48550/arxiv.0610087
