Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure
Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure
About this item
Full title
Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure
Author / Creator
Publisher
Moscow: Pleiades Publishing
Journal title
Semiconductors (Woodbury, N.Y.), 2018-09, Vol.52 (9), p.1188-1192
Language
English
Formats
Publication information
Publisher
Moscow: Pleiades Publishing
Subjects
More information
Scope and Contents
Contents
The current–voltage characteristics of
p
-Si–
n
-(Si
2
)
1 –
x
(ZnSe)
x
(0 ≤
x
≤ 0.01) heterostructures are studied at various temperatures. It is found that the current–voltage characteristics of such structures contain a portion of a sublinear increase in the current with voltage such as
V
=
V
0<...
Alternative Titles
Full title
Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure
Authors, Artists and Contributors
Author / Creator
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_journals_2092575981
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2092575981
Other Identifiers
ISSN
1063-7826
E-ISSN
1090-6479
DOI
10.1134/S1063782618090142
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