Buffer layer-less fabrication of high-mobility transparent oxide semiconductor, La-doped BaSnO3
Buffer layer-less fabrication of high-mobility transparent oxide semiconductor, La-doped BaSnO3
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Ithaca: Cornell University Library, arXiv.org
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English
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Ithaca: Cornell University Library, arXiv.org
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Transparent oxide semiconductors (TOSs) showing both high visible transparency and high electron mobility have attracted great attention towards the realization of advanced optoelectronic devices. La-doped BaSnO3 (LBSO) is one of the most promising TOSs because its single crystal exhibits a high electron mobility. However, in the LBSO films, it is...
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Full title
Buffer layer-less fabrication of high-mobility transparent oxide semiconductor, La-doped BaSnO3
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TN_cdi_proquest_journals_2093220700
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2093220700
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E-ISSN
2331-8422
DOI
10.48550/arxiv.1808.07619
