Thermoelectric Properties of Zn Doped BiCuSeO
Thermoelectric Properties of Zn Doped BiCuSeO
About this item
Full title
Thermoelectric Properties of Zn Doped BiCuSeO
Author / Creator
Publisher
New York: Springer US
Journal title
Journal of electronic materials, 2019-06, Vol.48 (6), p.3631-3642
Language
English
Formats
Publication information
Publisher
New York: Springer US
Subjects
More information
Scope and Contents
Contents
Layered oxychalcogenide BiCuSeO is a promising thermoelectric material due to its ultra-low thermal conductivity and moderate Seebeck coefficient. The doping of monovalent/divalent elements at the Bi site helps in reducing the electrical resistivity. In this report, Bi
1−
x
Zn
x
CuSeO (
x
= 0.0, 0.02, 0.04, 0.06, 0.08, and 0.1...
Alternative Titles
Full title
Thermoelectric Properties of Zn Doped BiCuSeO
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_journals_2193420622
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2193420622
Other Identifiers
ISSN
0361-5235
E-ISSN
1543-186X
DOI
10.1007/s11664-019-07118-5
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