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Oxidation Kinetics of Nitrogen Doped TiO2-δ Thin Films: Analysis on the Basis of Oxygen Activity Dep...

Oxidation Kinetics of Nitrogen Doped TiO2-δ Thin Films: Analysis on the Basis of Oxygen Activity Dep...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2198629670

Oxidation Kinetics of Nitrogen Doped TiO2-δ Thin Films: Analysis on the Basis of Oxygen Activity Dependence of the Chemical Diffusion Coefficient

About this item

Full title

Oxidation Kinetics of Nitrogen Doped TiO2-δ Thin Films: Analysis on the Basis of Oxygen Activity Dependence of the Chemical Diffusion Coefficient

Publisher

Zurich: Trans Tech Publications Ltd

Journal title

Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 2018-02, Vol.383, p.147-152

Language

English

Formats

Publication information

Publisher

Zurich: Trans Tech Publications Ltd

More information

Scope and Contents

Contents

The model explaining the occurrence of the electron concentration step front during oxidation of nitrogen-doped TiO2-δ thin films is presented. This model is based on ambipolar chemical diffusion coefficient analysis, for which immobile and uniformly distributed nitrogen component is assumed. The diffusion species and oxygen activity (pressure) pro...

Alternative Titles

Full title

Oxidation Kinetics of Nitrogen Doped TiO2-δ Thin Films: Analysis on the Basis of Oxygen Activity Dependence of the Chemical Diffusion Coefficient

Authors, Artists and Contributors

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_proquest_journals_2198629670

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2198629670

Other Identifiers

ISSN

1012-0386,1662-9507

E-ISSN

1662-9507

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