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Computational study of radiative rate in silicon nanocrystals: Role of electronegative ligands and t...

Computational study of radiative rate in silicon nanocrystals: Role of electronegative ligands and t...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2232264865

Computational study of radiative rate in silicon nanocrystals: Role of electronegative ligands and tensile strain

About this item

Full title

Computational study of radiative rate in silicon nanocrystals: Role of electronegative ligands and tensile strain

Publisher

Ithaca: Cornell University Library, arXiv.org

Journal title

arXiv.org, 2019-05

Language

English

Formats

Publication information

Publisher

Ithaca: Cornell University Library, arXiv.org

More information

Scope and Contents

Contents

It is widely accepted that the properties of most semiconductor nanocrystals can be tuned by their core size, shape and material. In covalent semiconductor nanocrystal materials, such as silicon, germanium or carbon, certain degree of tunability of the properties can be also achieved by the surface ligands. In particular, covalently bonded ligand s...

Alternative Titles

Full title

Computational study of radiative rate in silicon nanocrystals: Role of electronegative ligands and tensile strain

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Primary Identifiers

Record Identifier

TN_cdi_proquest_journals_2232264865

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2232264865

Other Identifiers

E-ISSN

2331-8422

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