Microstructure and strength of AlN–SiC interface studied by synchrotron X-rays
Microstructure and strength of AlN–SiC interface studied by synchrotron X-rays
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New York: Springer US
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Language
English
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New York: Springer US
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Bulk AlN crystals grown by sublimation on SiC substrates exhibit relatively high dislocation densities. The kind of defect formation at early growth stages influences the structural quality of the grown crystals. In this work, the dislocation distribution near to the interface is understood through investigation of thin (≤1.5 mm) continuous (non-cr...
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Microstructure and strength of AlN–SiC interface studied by synchrotron X-rays
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TN_cdi_proquest_journals_2259613137
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2259613137
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ISSN
0022-2461
E-ISSN
1573-4803
DOI
10.1007/s10853-016-0679-9
