Recent Advances in the Doping of 4H-SiC by Channeled Ion Implantation
Recent Advances in the Doping of 4H-SiC by Channeled Ion Implantation
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Pfaffikon: Trans Tech Publications Ltd
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English
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Pfaffikon: Trans Tech Publications Ltd
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The effect of lattice thermal vibrations on the channeling of 100 keV Al ions in 4H-SiC is investigated. By implanting at room temperature in the direction, the depth distribution of the incident ions is shown to be about 7 times deeper than for random implantations. At higher implantation temperatures, the channeling is reduced by the lattice vibr...
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Recent Advances in the Doping of 4H-SiC by Channeled Ion Implantation
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TN_cdi_proquest_journals_2260266945
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2260266945
