15 kV n-GTOs in 4H-SiC
15 kV n-GTOs in 4H-SiC
About this item
Full title
Author / Creator
Allen, Scott , Hull, Brett , Richmond, Jim , O'Brien, Heather , Jonas, Charlotte , Ryu, Sei Hyung , Burk, Albert A. , Casady, Jeff , Grider, David , Capell, Craig , Lemma, Yemane , Palmour, John W. , McCain, Matthew , O’Loughlin, Michael , Sabri, Shadi , van Brunt, Edward , Ogunniyi, Aderinto , Lelis, Aivars J. and Lichtenwalner, Daniel J.
Publisher
Pfaffikon: Trans Tech Publications
Journal title
Language
English
Formats
Publication information
Publisher
Pfaffikon: Trans Tech Publications
Subjects
More information
Scope and Contents
Contents
High performance 15 kV n-GTOs were demonstrated for the first time in 4H-SiC. The device utilized a 140 μm thick, lightly doped n-type drift layer, with 1450°C lifetime enhancement oxidation, which resulted in a carrier lifetime of 17.5 μs. The p+ backside injector layer was thinned to minimize parasitic resistances. A room temperature forward volt...
Alternative Titles
Full title
15 kV n-GTOs in 4H-SiC
Authors, Artists and Contributors
Author / Creator
Hull, Brett
Richmond, Jim
O'Brien, Heather
Jonas, Charlotte
Ryu, Sei Hyung
Burk, Albert A.
Casady, Jeff
Grider, David
Capell, Craig
Lemma, Yemane
Palmour, John W.
McCain, Matthew
O’Loughlin, Michael
Sabri, Shadi
van Brunt, Edward
Ogunniyi, Aderinto
Lelis, Aivars J.
Lichtenwalner, Daniel J.
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_journals_2260275854
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2260275854
Other Identifiers
ISBN
9783035713329,3035713324
ISSN
0255-5476,1662-9752
E-ISSN
1662-9752
DOI
10.4028/www.scientific.net/MSF.963.651
