Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor De...
Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition
About this item
Full title
Author / Creator
Publisher
Moscow: Pleiades Publishing
Journal title
Language
English
Formats
Publication information
Publisher
Moscow: Pleiades Publishing
Subjects
More information
Scope and Contents
Contents
n
+
-Ge/
p
+
-Si(001) epitaxial structures are grown by hot-wire chemical vapor deposition from GeH
4
at a low substrate temperature (~325°C). Prototype tunnel diodes allowing for monolithic integration into Si-based integrated circuits are formed based on these structures. Doping of the
n
+
-Ge layers with a donor imp...
Alternative Titles
Full title
Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_journals_2284161106
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2284161106
Other Identifiers
ISSN
1063-7826
E-ISSN
1090-6479
DOI
10.1134/S1063782619090203
