Photosensitivity of pSin(GaSb)1- x - y(Si2)x(GaAs)y, pSin(GaSb)1- x - y(Si2)x(GaAs)y,n(GaSb) Structu...
Photosensitivity of pSin(GaSb)1- x - y(Si2)x(GaAs)y, pSin(GaSb)1- x - y(Si2)x(GaAs)y,n(GaSb) Structures
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New York: Springer Nature B.V
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English
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New York: Springer Nature B.V
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Contents
Two-stage buffer n(GaSb)1 - x - y(Si2)x(GaAs)y and perfect n(GaSb) layers are grown on an pSi substrate by liquid-phase epitaxy from a tin solution-melt. It is shown that the photosensitivity of the pSi-n(GaSb)1 - x - y(Si2)x(GaAs)y structures is in the spectral range 1.0-1.6 eV, and that of the pSi - n (GaSb)1 - x - y(Si2)x(GaAs)y - nGaSb) structu...
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Full title
Photosensitivity of pSin(GaSb)1- x - y(Si2)x(GaAs)y, pSin(GaSb)1- x - y(Si2)x(GaAs)y,n(GaSb) Structures
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TN_cdi_proquest_journals_231311745
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_231311745
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ISSN
0003-701X
E-ISSN
1934-9424
DOI
10.3103/S0003701X08030122
