Anomalous temperature dependence of volt-ampere characteristics of pSi-n(Si2)1 −x(ZnSe)x structures
Anomalous temperature dependence of volt-ampere characteristics of pSi-n(Si2)1 −x(ZnSe)x structures
About this item
Full title
Author / Creator
Publisher
Heidelberg: Allerton Press, Inc
Journal title
Language
English
Formats
Publication information
Publisher
Heidelberg: Allerton Press, Inc
Subjects
More information
Scope and Contents
Contents
The volt-ampere characteristics (VAC) of
p
Si-
n
(Si
2
)
1−
x
(ZnSe)
x
structures that are grown by liquidphase epitaxy from a limited volume of a tin solution (melt) have been studied. Their unusual property—decrease of the current with increase of the temperature from 100 to 140°C—is explained on the basis of a re...
Alternative Titles
Full title
Anomalous temperature dependence of volt-ampere characteristics of pSi-n(Si2)1 −x(ZnSe)x structures
Authors, Artists and Contributors
Author / Creator
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_journals_231321450
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_231321450
Other Identifiers
ISSN
0003-701X
E-ISSN
1934-9424
DOI
10.3103/S0003701X09030050
