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Dislocation-controlled microscopic mechanical phenomena in single crystal silicon under bending stre...

Dislocation-controlled microscopic mechanical phenomena in single crystal silicon under bending stre...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2379986862

Dislocation-controlled microscopic mechanical phenomena in single crystal silicon under bending stress at room temperature

About this item

Full title

Dislocation-controlled microscopic mechanical phenomena in single crystal silicon under bending stress at room temperature

Publisher

New York: Springer US

Journal title

Journal of materials science, 2020-06, Vol.55 (17), p.7359-7372

Language

English

Formats

Publication information

Publisher

New York: Springer US

More information

Scope and Contents

Contents

Silicon is widely used within energy, electro-mechanical, environmental devices by nanostructural control. As silicon parts constitute structural components whose size is ever decreasing, it is critical to understand the mechanical properties of single crystal silicon from precise measurements of load and displacement using microscopic sample in su...

Alternative Titles

Full title

Dislocation-controlled microscopic mechanical phenomena in single crystal silicon under bending stress at room temperature

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_proquest_journals_2379986862

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2379986862

Other Identifiers

ISSN

0022-2461

E-ISSN

1573-4803

DOI

10.1007/s10853-020-04528-3

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