Reversible hysteresis inversion in MoS2 field effect transistors
Reversible hysteresis inversion in MoS2 field effect transistors
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London: Nature Publishing Group UK
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Language
English
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London: Nature Publishing Group UK
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The origin of threshold voltage instability with gate voltage in MoS
2
transistors is poorly understood but critical for device reliability and performance. Reversibility of the temperature dependence of hysteresis and its inversion with temperature in MoS
2
transistors has not been demonstrated. In this work, we delineate two independe...
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Reversible hysteresis inversion in MoS2 field effect transistors
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TN_cdi_proquest_journals_2389676398
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2389676398
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ISSN
2397-7132
E-ISSN
2397-7132
DOI
10.1038/s41699-017-0038-y
