Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges
Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges
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Full title
Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges
Author / Creator
Publisher
Pfaffikon: Trans Tech Publications Ltd
Journal title
Materials science forum, 2020-07, Vol.1004, p.1109-1114
Language
English
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Publisher
Pfaffikon: Trans Tech Publications Ltd
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Scope and Contents
Contents
Silicon carbide junction field effect transistors (SiC JFETs) were irradiated with gamma-rays up to 9 MGy (H2O). With increasing dose, apparent shift of drain current-gate voltage (ID-VG) curves to negative voltage side as observed for SiC metal oxide semiconductor (MOS) FETs did not take place. No significant difference is observed between drain a...
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Full title
Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges
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Record Identifier
TN_cdi_proquest_journals_2429132985
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2429132985
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