GaN Thin-Film-Depositions on Glass and Amorphous-SiO2-Layer-Deposited Si Single-Crystalline Substrat...
GaN Thin-Film-Depositions on Glass and Amorphous-SiO2-Layer-Deposited Si Single-Crystalline Substrates
About this item
Full title
Author / Creator
Publisher
Pfaffikon: Trans Tech Publications Ltd
Journal title
Language
English
Formats
Publication information
Publisher
Pfaffikon: Trans Tech Publications Ltd
Subjects
More information
Scope and Contents
Contents
Gallium nitride (GaN) transparent and semiconducting thin films were prepared on an amorphous glass substrate by a reactive sputtering method using Ar-N2 radio-frequency plasmas. In addition, GaN thin films were prepared on amorphous silicon-dioxide (SiO2) layer-deposited Si (111) single-crystalline substrates by a reactive evaporation method. Opti...
Alternative Titles
Full title
GaN Thin-Film-Depositions on Glass and Amorphous-SiO2-Layer-Deposited Si Single-Crystalline Substrates
Authors, Artists and Contributors
Author / Creator
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_journals_2444658664
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2444658664
