Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
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Ithaca: Cornell University Library, arXiv.org
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English
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Ithaca: Cornell University Library, arXiv.org
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We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipola...
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Full title
Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
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TN_cdi_proquest_journals_2447370310
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2447370310
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E-ISSN
2331-8422
DOI
10.48550/arxiv.2009.13944
