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Optimization of the electron transport layer in quantum dot light-emitting devices

Optimization of the electron transport layer in quantum dot light-emitting devices

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2473187994

Optimization of the electron transport layer in quantum dot light-emitting devices

About this item

Full title

Optimization of the electron transport layer in quantum dot light-emitting devices

Publisher

London: Nature Publishing Group UK

Journal title

NPG Asia materials, 2020-09, Vol.12 (1), Article 57

Language

English

Formats

Publication information

Publisher

London: Nature Publishing Group UK

More information

Scope and Contents

Contents

Quantum dot light-emitting devices have emerged as an important technology for display applications. Their emission is a result of recombination between positive and negative charge carriers that are transported through the hole and electron conductive layers, respectively. The selection of electron or hole transport materials in these devices not...

Alternative Titles

Full title

Optimization of the electron transport layer in quantum dot light-emitting devices

Authors, Artists and Contributors

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_proquest_journals_2473187994

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2473187994

Other Identifiers

ISSN

1884-4049

E-ISSN

1884-4057

DOI

10.1038/s41427-020-00237-0

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