XAFS and TEM Investigation of Nanocluster Formation in 64Zn+ Ion-Implanted and Thermo-Oxidized SiO2...
XAFS and TEM Investigation of Nanocluster Formation in 64Zn+ Ion-Implanted and Thermo-Oxidized SiO2 Film
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Publisher
New York: Springer US
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Language
English
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Publisher
New York: Springer US
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Contents
Due to their tunable current–voltage characteristics, Zn-doped thin SiO
2
films are promising for microelectronic devices, e.g., memristors. In this work we studied single-crystal Si (100) substrates with 200 nm SiO
2
surface layers implanted with
64
Zn
+
using Zn K-edge x-ray absorption spectroscopy (XAS), transmission elec...
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Full title
XAFS and TEM Investigation of Nanocluster Formation in 64Zn+ Ion-Implanted and Thermo-Oxidized SiO2 Film
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TN_cdi_proquest_journals_2473246222
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2473246222
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ISSN
0361-5235
E-ISSN
1543-186X
DOI
10.1007/s11664-020-08454-7
