Examination of the Hydrogen Incorporation into Radio Frequency-Sputtered Hydrogenated SiNx Thin Film...
Examination of the Hydrogen Incorporation into Radio Frequency-Sputtered Hydrogenated SiNx Thin Films
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Publisher
Basel: MDPI AG
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Language
English
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Basel: MDPI AG
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Contents
In this work, amorphous hydrogen-free silicon nitride (a-SiNx) and amorphous hydrogenated silicon nitride (a-SiNx:H) films were deposited by radio frequency (RF) sputtering applying various amounts of hydrogen gas. Structural and optical properties were investigated as a function of hydrogen concentration. The refractive index of 1.96 was character...
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Full title
Examination of the Hydrogen Incorporation into Radio Frequency-Sputtered Hydrogenated SiNx Thin Films
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TN_cdi_proquest_journals_2476701525
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2476701525
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ISSN
2079-6412
E-ISSN
2079-6412
DOI
10.3390/coatings11010054
