Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-...
Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors
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Publisher
New York: Springer US
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Language
English
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Publisher
New York: Springer US
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Scope and Contents
Contents
A physics-based analytical model for GaN high-electron-mobility transistors (HEMTs) with non-recessed- and recessed-gate structure is presented. Based on this model, the two-dimensional electron gas density (2DEG) and thereby the on-state resistance and breakdown voltage can be controlled by varying the barrier layer thickness and Al mole fraction...
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Full title
Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors
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TN_cdi_proquest_journals_2532438751
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2532438751
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ISSN
0361-5235
E-ISSN
1543-186X
DOI
10.1007/s11664-021-08842-7
